CG
R&D Project Manager
Cambridge GaN Devices
Cambridge, England, GB
BS
Black Semiconductor develops graphene photonics integration for electronic chips to improve communication bandwidth and energy efficiency.
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Cambridge GaN Devices
Fabless semiconductor company, spun out of the University of Cambridge in 2016, developing energy-efficient GaN power devices and ICs on its proprietary ICeGaN platform.
Cambridge GaN Devices is a fabless semiconductor company founded in 2016 and spun out of the University of Cambridge. It designs energy-efficient gallium nitride (GaN) power devices and integrated circuits built on its proprietary ICeGaN platform. The company develops and commercialises GaN transistors and ICs intended for high-volume production, following a fabless model in which design is kept in-house and manufacturing is outsourced.
The ICeGaN platform is designed to make GaN devices as straightforward to use as conventional MOSFETs while improving on their performance. The company reports efficiency levels exceeding 99%, and says its GaN devices can deliver energy savings of up to 50% compared with traditional silicon-based solutions.
Its products target applications in electric vehicles, data centres, motor drives and consumer electronics. The company states a focus on reducing energy consumption and environmental impact across these sectors. Further details on funding, headcount and geographic operations are not disclosed.